بهینه‏ سازی و مطالعه سینتیکی فرآیند حل‏سازی در بازیابی گالیم از LED مستعمل

نوع مقاله : مقاله پژوهشی

نویسندگان

1 کارشناس ارشد، دانشکده مهندسی متالورژی و مواد، پردیس دانشکده‏های فنی، دانشگاه تهران، تهران، ایران.

2 دانشیار، دانشکده مهندسی متالورژی و مواد، پردیس دانشکده‏های فنی، دانشگاه تهران، تهران، ایران.

چکیده

در این پژوهش، بازیافت عنصر گالیم از دیودهای نورافشان (LED) باطله به روش هیدرومتالورژی انجام شده است. مراحل مختلف این فرایند شامل جداسازی تراشه از لامپ LED، اکسیداسیون تراشه­ها و حل­سازی در محیط هیدروکلریک اسید است. از آنجا که گالیم در تراشه لامپ LED به شکل فاز نیتریدی تقریباً نامحلول حضور دارد، تراشه باید ابتدا از لامپ LED جدا شده و اکسیداسیون در راستای تغییر فاز حاوی گالیم (نیتریدی به اکسیدی) انجام شود. پس از این مراحل تراشه­ها تحت عملیات حل­سازی قرارگرفتند. در آزمایش­های حل­سازی، متغیرهای مختلفی از جمله دمای حل­سازی، زمان حل­سازی و غلظت حلال هیدروکلریک اسید مورد بررسی قرار گرفته و شرایط بهینه تعیین شده­اند. طراحی آزمایش به روش سطح پاسخ انجام شد. پس از انجام آزمایش و آنالیز محلول­های نهایی، بهترین نتیجه متعلق به آزمایش انجام شده در غلظت 4 مولار هیدروکلریک اسید، دمای ºC 93 و در زمان 2 ساعت و برابر با 4/91 % بازیابی گالیم بدست آمد. با توجه به تحلیل آماری نتایج بدست آمده از آزمایش­ها، دمای حل­سازی به عنوان موثرترین متغیر معرفی شد. در ادامه آزمایش­های تکمیلی به منظور تعیین مکانیزم و تحلیل سینتیکی فرایند انجام شد. این بررسی­ها نشان داد که در دمای ºC 50، واکنش شیمیایی، کنترل کننده این فرایند انحلال است. این در حالی­است که با افزایش دما به 65 و ºC 80، مکانیزم فرآیند به کنترل شده از طریق نفوذ از فیلم سیال تغییر می­کند.

کلیدواژه‌ها


عنوان مقاله [English]

Optimization and kinetic study of leaching process in recycling of Ga from waste LED

نویسندگان [English]

  • Majid Maarefvand 1
  • Saeed Sheibani 2
  • Fereshteh rashchi 2
1 M.Sc., School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, Tehran, Iran.
2 Associate Professor, School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, Tehran, Iran.
چکیده [English]

In this research, the recovery of the gallium from a waste light-emitting diode (LED) was carried out by a hydrometallurgical method. This process involves the chip separation from the LED, oxidation of the chips and gallium leaching in hydrochloric acid medium. Since gallium is present in an insoluble nitride phase in the LED chip, the chip must be separated from the LED, and then an oxidation step is needed to convert the nitride phase to oxide. After these steps, the oxidized chips were subjected to the leaching process. Various variables such as leaching temperature, leaching time and hydrochloric acid concentration have been investigated in the leaching experiments and optimal conditions have been determined. The design of experiment was done through the surface response method. The optimum conditions after performing the experiments and analyzing the final solutions were determined. At optimum leaching conditions of 4 M hydrochloric acid, 93 ºC and 120 minutes, the gallium leaching recovery was 91.4%. It can be found that the leaching temperature is the most effective parameter in this process. Further experiments were performed to determine the mechanism and kinetic analysis of the process. These studies showed that at 50 °C, the chemical reaction controls the rate of the leaching process. However, the reaction mechanism was changed to diffusion-controlled as the temperature increases to 65 and 80 °C.

کلیدواژه‌ها [English]

  • Recycling
  • Gallium
  • Design of experiment
  • Leaching
  • Kinetics
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