تاثیر ولتاژ بایاس بر ساختار، مورفولوژی و سختی پوشش نیترید زیرکونیوم ایجاد شده به روش کندوپاش مغناطیسی واکنشی

نوع مقاله: مقاله پژوهشی

نویسندگان

1 دانشجوی کارشناسی ارشد، دانشکده مهندسی مواد و متالورژی، دانشگاه علم و صنعت ایران

2 استادیار، دانشکده مهندسی مواد و متالورژی، دانشگاه علم و صنعت ایران،

3 استادیار، دانشکده مهندسی مواد و متالورژی، دانشگاه علم و صنعت ایران

چکیده

در این پژوهش لایه های نیترید زیرکونیوم روی سیلیکون و فولاد زنگ نزن ۳۰۴ با روش کندوپاش مغناطیسی واکنشی پوشش داده شدند. تاثیر ولتاژ بایاس زیرلایه روی ساختار لایه ها، مورفولوژی و سختی مورد بررسی قرار گرفت. لایه ها بوسیله ی پراش اشعه ایکس، میکروسکوپ الکترونی روبشی، میکروسختی سنجی و میکروسکوپ نیروی اتمی آنالیز شدند. بر اساس الگوهای پراش اشعه ایکس، تنها پیک های پراش ZrN مربوط به صفحات (۱۱۱) و (۲۰۰) مشاهده شدند که با افزایش ولتاژ بایاس از ۰ تا ۱۵۰ ولت اندازه دانه ها از ۱۹ نانومتر به ۱۳ نانومتر کاهش یافتند. علاوه براین، مشاهدات میکروسکوپ الکترونی روبشی از سطح مقطع همه ی لایه های نیترید زیرکونیوم، ساختار ستونی را نشان دادند. همچنین تصاویر میکروسکوپ نیروی اتمی از سطح پوشش ها افزایش زبری سطح پوشش ها با افزایش ولتاژ بایاس را نمایش دادند. افزایش ولتاژ بایاس تاثیر مستقیم روی اندازه سختی پوشش ها داشت که برای نمونه با بایاس ۱۰۰ ولت به اندازه بیشینه حدود ۱۷۲۰ ویکرز رسید. در ضمن اعمال ولتاژ بایاس تا یک حد بحرانی باعث افزایش تراکم لایه همراه با حذف تخلخل ها و افزایش تنش فشاری می شود و در صورتیکه مقدار ولتاژ بایاس بیشتر از ۱۰۰ ولت اعمال شود، به دلیل افزایش احتمال پدیده کندوپاش مجدد، خواص مکانیکی پوشش افت می کند.

کلیدواژه‌ها


عنوان مقاله [English]

Effect of bias voltage on the structure, morphology and hardness of ZrN coating deposited by reactive magnetron sputtering

نویسندگان [English]

  • Reza Madanypoor 1
  • Masood Hashemi Niasari 2
  • S. Morteza Masoudpanah 3
1 MSc. Student, School of Metallurgy and Materials Eng., Iran University of Science and Technology
2 Assistant Professor, School of Metallurgy and Materials Eng., Iran University of Science and Technology,
3 Assistant Professor, School of Metallurgy and Materials Eng., Iran University of Science and Technology,
چکیده [English]

ZrN thin films were deposited on silicon (111) and 304 stainless steel substrates using direct current (DC) reactive magnetron sputtering. Effects of the substrate bias voltage on the films’ structure, morphology and hardness were investigated. The films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and microhardness tester. XRD patterns showed grain size refinement from 19 to 13 nm with an increase of bias voltage from 0 V to 150 V. In addition, (111) and (200) diffraction peaks were only present and other orientation were omitted. FESEM cross section of ZrN thin films showed a well aligned columnar structure. Based on AFM images, the surface roughness was also increased at higher bial voltages. The increase of bias voltage also resulted in hardness increase. Maximum hardness of 1720 Vickers was obtained at 100 V bias. Negative bias voltage induces some residual stress in the films due to the increase in film's density by the elimination of porosity and voids.

کلیدواژه‌ها [English]

  • Zirconium Nitride
  • Reactive Sputtering
  • Bias Voltage
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